High-pressure crystallization of GaN for electronic applicationsGRZEGORY, I.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 44, pp 11055-11067, issn 0953-8984, 13 p.Conference Paper

High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN : based structuresGRZEGORY, I.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 82, Num 1-3, pp 30-34, issn 0921-5107Article

GaN/AlGaN quantum wells for UV emission : heteroepitaxy versus homoepitaxyGRANDJEAN, N; MASSIES, J; GRZEGORY, I et al.Semiconductor science and technology. 2001, Vol 16, Num 5, pp 358-361, issn 0268-1242Article

X-ray examination of GaN single crystals grown at high hydrostatic pressureLESZCZYNSKI, M; GRZEGORY, I; BOCKOWSKI, M et al.Journal of crystal growth. 1993, Vol 126, Num 4, pp 601-604, issn 0022-0248Article

Crystal growth of GaP doped with nitrogen under high nitrogen pressureKARPINSKI, J; JUN, J; GRZEGORY, I et al.Journal of crystal growth. 1985, Vol 72, Num 3, pp 711-716, issn 0022-0248Article

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowthKAMLER, G; LUCZNIK, B; PASTUSZKA, B et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3478-3481, issn 0022-0248, 4 p.Article

Chemical polishing of bulk and epitaxial GaNWEYHER, J. L; MÜLLER, S; GRZEGORY, I et al.Journal of crystal growth. 1997, Vol 182, Num 1-2, pp 17-22, issn 0022-0248Article

Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N₂ pressurePOROWSKI, S; GRZEGORY, I.Journal of crystal growth. 1997, Vol 178, Num 1-2, pp 174-188, issn 0022-0248Article

Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etchingNOWAK, G; WEYHER, J. L; KHACHAPURIDZE, A et al.Journal of crystal growth. 2012, Vol 353, Num 1, pp 68-71, issn 0022-0248, 4 p.Article

Structural defects in GaN crystals grown by HVPE on needle-shaped GaN seeds obtained under high N₂ pressureSMALC-KOZIOROWSKA, J; KAMLER, G; LUCZNIK, B et al.Journal of crystal growth. 2009, Vol 311, Num 5, pp 1407-1410, issn 0022-0248, 4 p.Article

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWEYHER, J. L; SOCHACKI, T; BOCKOWSKI, M et al.Journal of crystal growth. 2014, Vol 403, pp 77-82, issn 0022-0248, 6 p.Conference Paper

Structural defects in bulk GaNLILIENTAL-WEBER, Z; DOS REIS, R; MANCUSO, M et al.Journal of crystal growth. 2014, Vol 403, pp 66-71, issn 0022-0248, 6 p.Conference Paper

Tilt of InGaN layers on miscut GaN substratesKRYSKO, M; DOMAGALA, J. Z; POROWSKI, S et al.Physica status solidi. Rapid research letters (Print). 2010, Vol 4, Num 7, pp 142-144, issn 1862-6254, 3 p.Article

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increaseKOMOROWSKA, K; WISNIEWSKI, P; MARONA, L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940Q.1-68940Q.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Resonant photoemission study of Ti interaction with GaN surfaceKOWALIK, I. A; KOWALSKI, B. J; KACZOR, P et al.Surface science. 2006, Vol 600, Num 4, pp 873-879, issn 0039-6028, 7 p.Article

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperaturesBOCKOWSKI, M; GRZEGORY, I; KRUKOWSKI, S et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 55-64, issn 0022-0248, 10 p.Article

Surface and electronic structure of Ga_0.92In_0.08N thin film investigated by photoelectron spectroscopyKOWALSKI, B. J; KOWALIK, I. A; POROWSKI, S et al.Thin solid films. 2005, Vol 476, Num 2, pp 396-404, issn 0040-6090, 9 p.Article

Defects in GaN single crystals and homoepitaxial structuresWEYHER, J. L; KAMLER, G; NOWAK, G et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 135-142, issn 0022-0248, 8 p.Conference Paper

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystalsTUOMISTO, F; SUSKI, T; GEBICKI, W et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 289-292, issn 0370-1972, 4 p.Conference Paper

Thermal conductivity of GaN crystals grown by high pressure methodJEZOWSKI, A; STACHOWIAK, P; PLACKOWSKI, T et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 447-450, issn 0370-1972, 4 p.Conference Paper

MOVPE homoepitaxy of high-quality GaN : Crystal growth and devicesKIRCHNER, C; SCHWEGLER, V; EBERHARD, F et al.Progress in crystal growth and characterization of materials. 2000, Vol 41, Num 1-4, pp 57-83, issn 0960-8974Article

Homo-epitaxial GaN growth on exact and misoriented single crystals : suppression of hillock formationZAUNER, A. R. A; WEYHER, J. L; PLOMP, M et al.Journal of crystal growth. 2000, Vol 210, Num 4, pp 435-443, issn 0022-0248Article

InN thermodynamics and crystal growth at high pressure of N₂GRZEGORY, I; SUN, J; KRUKOWSKI, S et al.Japanese journal of applied physics. 1992, Vol 32, pp 343-345, issn 0021-4922, SUP1Conference Paper

High pressure phase transition in aluminium nitrideGORCZYCA, I; CHRISTENSEN, N. E; PERLIN, P et al.Solid state communications. 1991, Vol 79, Num 12, pp 1033-1034, issn 0038-1098Article

Electron spin resonance and Rashba field in GaN-based materialsWOLOS, A; WILAMOWSKI, Z; SKIERBISZEWSKI, C et al.Physica. B, Condensed matter. 2011, Vol 406, Num 13, pp 2548-2554, issn 0921-4526, 7 p.Article